MOSFET 2N-CH 20V 9A 6-UDFN DMN2014LHAB-7
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Description:
MOSFET 2N-CH 20V 9A 6-UDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
2 N Channel(two)Co leakage
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
DMN2014LHAB-7(FET, MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26707,Price reference "real-time change" China/Hongkong。 DMN2014LHAB-7 package/specs, Download DMN2014LHAB-7、Datasheet。